دیتاشیت FCH099N65S3-F155
مشخصات دیتاشیت
نام دیتاشیت |
FCH099N65S3
|
حجم فایل |
452.837
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
10
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
SuperFET® III
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
650V
-
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
99mOhm @ 15A, 10V
-
Vgs(th) (Max) @ Id:
4.5V @ 3mA
-
Gate Charge (Qg) (Max) @ Vgs:
61nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
2480pF @ 400V
-
FET Feature:
-
-
Power Dissipation (Max):
227W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-247-3
-
Package / Case:
TO-247-3
-
Base Part Number:
FCH09
-
detail:
N-Channel 650V 30A (Tc) 227W (Tc) Through Hole TO-247-3